| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ350 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 315V(min), 385V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5FMCJ350A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 332V(min), 368V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5FMCJ350C |
TVS Diode |
Rectron Semiconductor |
| 4 |
1.5FMCJ350CA |
TVS Diode |
Rectron Semiconductor |
| 5 |
15FMCJ350 |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
| 6 |
15FMCJ350A |
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
Rectron Semiconductor |
| 7 |
2SJ350 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 8 |
2SJ350 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 9 |
2SJ350 |
Transistors>Switching/MOSFETs |
Renesas |
| 10 |
FJ350301 |
Small Signal MOSFETs |
Panasonic |
| 11 |
FJ3503010L |
Other MOSFETs |
Panasonic |
| 12 |
GBJ35005 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 13 |
GBJ3501 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 14 |
GBJ3502 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 15 |
GBJ3504 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 16 |
GBJ3506 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 17 |
GBJ3508 |
BRIDGE RECTIFIERS |
Micro Commercial Components |
| 18 |
HJ350 |
PNP EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
| 19 |
IRFK4J350 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
| 20 |
IRFK6J350 |
400V SINGLE HEXFET Power MOSFET in a TO-240AA package |
International Rectifier |
| 21 |
J350 |
Mini size of Discrete semiconductor elements |
SINYORK |
| 22 |
NX8560LJ350-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1535.03 nm. Frequency 195.30 THz. FC-UPC connector. |
NEC |
| 23 |
NX8560LJ350-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1535.03 nm. Frequency 195.30 THz. SC-UPC connector. |
NEC |
| 24 |
NX8560SJ350-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1535.036 nm. Frequency 195.30 THz. FC-UPC connector. |
NEC |
| 25 |
NX8560SJ350-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1535.036 nm. Frequency 195.30 THz. SC-UPC connector. |
NEC |
| 26 |
P4FMAJ350 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) |
Rectron Semiconductor |
| 27 |
P4FMAJ350A |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) |
Rectron Semiconductor |
| 28 |
P4FMAJ350C |
TVS Diode |
Rectron Semiconductor |
| 29 |
P4FMAJ350CA |
TVS Diode |
Rectron Semiconductor |
| 30 |
P6FMBJ350 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (600 WATT PEAK POWER 1.0 WATT STEADY STATE) |
Rectron Semiconductor |
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