No. |
Part Name |
Description |
Manufacturer |
1 |
HJ3669 |
NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Microelectronics |
2 |
J3669 |
Mini size of Discrete semiconductor elements |
SINYORK |
3 |
NX8560LJ366-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1536.60 nm. Frequency 195.10 THz. FC-UPC connector. |
NEC |
4 |
NX8560LJ366-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1536.60 nm. Frequency 195.10 THz. SC-UPC connector. |
NEC |
5 |
NX8560SJ366-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1536.643 nm. Frequency 195.10 THz. FC-UPC connector. |
NEC |
6 |
NX8560SJ366-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1536.643 nm. Frequency 195.10 THz. SC-UPC connector. |
NEC |
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