| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ370 |
60V SERIES POWER MOSFET |
Shindengen |
| 2 |
2SJ372 |
60V SERIES POWER MOSFET |
Shindengen |
| 3 |
2SJ377 |
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSV) Relay Drive, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 4 |
2SJ378 |
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSV) Relay Drive, DC .DC Converter and Motor Drive Applications |
TOSHIBA |
| 5 |
BJ37931E |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 6 |
ERJL12UJ37MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 7 |
ERJL14UJ37MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
| 8 |
GJ37931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 9 |
MA2J372 |
Variable Capacitance Diodes |
Panasonic |
| 10 |
MJ3701 |
For specification, see MJ2253 Data |
Motorola |
| 11 |
MJ3701 |
1A Medium-Power PNP Silicon Transistor 25W |
Motorola |
| 12 |
MJ3760 |
Horizontal deflection silicon NPN transistor 750V 80W |
Motorola |
| 13 |
MJ3761 |
Horizontal deflection silicon NPN transistor 750V 80W |
Motorola |
| 14 |
MJ3771 |
High Power NPN silicon transistor 200W |
Motorola |
| 15 |
MJ3771 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
| 16 |
MJ3772 |
High Power NPN silicon transistor 200W |
Motorola |
| 17 |
MJ3772 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
| 18 |
MJ3773 |
16A power transistor NPN silicon 200W |
Motorola |
| 19 |
NX8560LJ373-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1537.39 nm. Frequency 195.00 THz. FC-UPC connector. |
NEC |
| 20 |
NX8560LJ373-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1537.39 nm. Frequency 195.00 THz. SC-UPC connector. |
NEC |
| 21 |
NX8560SJ370-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1537.003 nm. Frequency 195.05 THz. FC-UPC connector. |
NEC |
| 22 |
NX8560SJ370-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1537.003 nm. Frequency 195.05 THz. SC-UPC connector. |
NEC |
| 23 |
NX8560SJ373-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1537.397 nm. Frequency 195.00 THz. FC-UPC connector. |
NEC |
| 24 |
NX8560SJ373-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1537.397 nm. Frequency 195.00 THz. SC-UPC connector. |
NEC |
| 25 |
NX8560SJ377-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1537.792 nm. Frequency 194.95 THz. FC-UPC connector. |
NEC |
| 26 |
NX8560SJ377-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1537.792 nm. Frequency 194.95 THz. SC-UPC connector. |
NEC |
| 27 |
SJ370 |
5 V,+/-100 ppm, CMOS crystal clock oscillator |
NEL Frequency Controls |
| 28 |
SJ371 |
5 V,+/-50 ppm, CMOS crystal clock oscillator |
NEL Frequency Controls |
| 29 |
SJ377 |
5 V,+/-100 ppm, CMOS crystal clock oscillator |
NEL Frequency Controls |
| 30 |
SJ379 |
5 V,customer specific, CMOS crystal clock oscillator |
NEL Frequency Controls |
| | | |
