| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ425 |
MOSFET |
Sanken |
| 2 |
IRHMJ4250 |
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package |
International Rectifier |
| 3 |
MJ425 |
High Voltage NPN power silicon Transistor 100W |
Motorola |
| 4 |
NX8560SJ425-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.539 nm. Frequency 194.35 THz. FC-UPC connector. |
NEC |
| 5 |
NX8560SJ425-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1542.539 nm. Frequency 194.35 THz. SC-UPC connector. |
NEC |
| 6 |
SMJ4256 |
262/144-BIT DYNAMIC RANDOM-ACCESS MEMORY |
Texas Instruments |
| 7 |
SMJ4256-12FV |
262144-bit dynamic random-access memory, 120ns |
Texas Instruments |
| 8 |
SMJ4256-12JD |
262144-bit dynamic random-access memory, 120ns |
Texas Instruments |
| 9 |
SMJ4256-15FV |
262144-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 10 |
SMJ4256-15JD |
262144-bit dynamic random-access memory, 150ns |
Texas Instruments |
| 11 |
SMJ4256-20FV |
262144-bit dynamic random-access memory, 200ns |
Texas Instruments |
| 12 |
SMJ4256-20JD |
262144-bit dynamic random-access memory, 200ns |
Texas Instruments |
| 13 |
SMJ4256FV |
262/144-BIT DYNAMIC RANDOM-ACCESS MEMORY |
Texas Instruments |
| 14 |
SMJ4256JD |
262/144-BIT DYNAMIC RANDOM-ACCESS MEMORY |
Texas Instruments |
| | | |
