No. |
Part Name |
Description |
Manufacturer |
1 |
2SJ460 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
2 |
2SJ460(M) |
Pch D-MOSFET SST 50V/0.1A |
NEC |
3 |
2SJ460(M)-T |
Pch D-MOSFET SST 50V/0.1A |
NEC |
4 |
2SJ460-T/JM |
Pch D-MOSFET SST 50V/0.1A |
NEC |
5 |
2SJ460/JM |
Pch D-MOSFET SST 50V/0.1A |
NEC |
6 |
2SJ461 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
7 |
2SJ462 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
8 |
2SJ463 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
9 |
2SJ463A |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
NEC |
10 |
2SJ464 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS |
TOSHIBA |
11 |
2SJ465 |
DC .DC Converter, Relay Drive and Motor Drive Applications |
TOSHIBA |
12 |
2SJ466 |
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
13 |
ERJL12UJ46MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
14 |
ERJL14UJ46MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
15 |
ERJL1DUJ46MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
16 |
ERJL1WUJ46MU |
Current Sensing Chip Resistors Thick Film Type |
Panasonic |
17 |
LNJ461C34RA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
18 |
LNJ461C3XRA |
Opto-Electronic Device - Visible Light Emitting Diodes - Chip LEDs |
Panasonic |
19 |
MJ4645 |
1.0A power PNP silicon transistor 5W 200V |
Motorola |
20 |
MJ4646 |
1A Power PNP silicon transistor 5W |
Motorola |
21 |
MJ4646 |
Bipolar PNP Device |
SemeLAB |
22 |
MJ4647 |
1.0A power PNP silicon transistor 5W 400V |
Motorola |
23 |
MJ4648 |
1A Power PNP silicon transistor 5W |
Motorola |
24 |
NX8560LJ461-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.11 nm. Frequency 193.90 THz. FC-UPC connector. |
NEC |
25 |
NX8560LJ461-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.11 nm. Frequency 193.90 THz. SC-UPC connector. |
NEC |
26 |
NX8560LJ469-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.91 nm. Frequency 193.80 THz. FC-UPC connector. |
NEC |
27 |
NX8560LJ469-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1546.91 nm. Frequency 193.90 THz. SC-UPC connector. |
NEC |
28 |
NX8560SJ461-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1546.119 nm. Frequency 193.90 THz. FC-UPC connector. |
NEC |
29 |
NX8560SJ461-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1546.119 nm. Frequency 193.90 THz. SC-UPC connector. |
NEC |
30 |
NX8560SJ465-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1546.518 nm. Frequency 193.85 THz. FC-UPC connector. |
NEC |
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