| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SJ517 |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
| 2 |
2SJ517 |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
| 3 |
2SJ517 |
Transistors>Switching/MOSFETs |
Renesas |
| 4 |
NX8560LJ517-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1551.72 nm. Frequency 193.20 THz. FC-UPC connector. |
NEC |
| 5 |
NX8560LJ517-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1551.72 nm. Frequency 193.20 THz. SC-UPC connector. |
NEC |
| 6 |
NX8560SJ517-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1551.721 nm. Frequency 193.20 THz. FC-UPC connector. |
NEC |
| 7 |
NX8560SJ517-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1551.721 nm. Frequency 193.20 THz. SC-UPC connector. |
NEC |
| | | |
