No. |
Part Name |
Description |
Manufacturer |
1 |
2SJ549 |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
2 |
2SJ549(L) |
Power switching MOSFET |
Hitachi Semiconductor |
3 |
2SJ549(L)/(S) |
Silicon P-Channel MOS FET |
Hitachi Semiconductor |
4 |
2SJ549(S) |
Power switching MOSFET |
Hitachi Semiconductor |
5 |
2SJ549L |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
6 |
2SJ549L |
Transistors>Switching/MOSFETs |
Renesas |
7 |
2SJ549S |
Silicon P Channel MOS FET High Speed Power Switching |
Hitachi Semiconductor |
8 |
2SJ549S |
Transistors>Switching/MOSFETs |
Renesas |
9 |
NX8560LJ549-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1554.94 nm. Frequency 192.80 THz. FC-UPC connector. |
NEC |
10 |
NX8560LJ549-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1554.94 nm. Frequency 192.80 THz. SC-UPC connector. |
NEC |
11 |
NX8560SJ549-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1554.940 nm. Frequency 192.80 THz. FC-UPC connector. |
NEC |
12 |
NX8560SJ549-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1554.940 nm. Frequency 192.80 THz. SC-UPC connector. |
NEC |
13 |
SNJ5490AJ |
Decade Counter |
Texas Instruments |
14 |
SNJ5490AW |
Decade Counter |
Texas Instruments |
15 |
SNJ5492AJ |
DIVIDE-BY-TWELVE COUNTER |
Texas Instruments |
16 |
SNJ5492AW |
DIVIDE-BY-TWELVE COUNTER |
Texas Instruments |
17 |
SNJ5495AJ |
4-Bit Parallel-Access Shift Registers |
Texas Instruments |
18 |
SNJ5495AW |
4-Bit Parallel-Access Shift Registers |
Texas Instruments |
19 |
SNJ5496J |
5-bit Shift Register |
Texas Instruments |
20 |
SNJ5496W |
5-bit Shift Register |
Texas Instruments |
21 |
SNJ5497J |
Synchronous 6-Bit Binary Rate Multipliers |
Texas Instruments |
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