| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRHNJ58130 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package |
International Rectifier |
| 2 |
J5819-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 3 |
J5819UR-1 |
1 AMP SCHOTTKY BARRIER RECTIFIERS |
Compensated Devices Incorporated |
| 4 |
NX8560LJ581-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
| 5 |
NX8560LJ581-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1558.17 nm. Frequency 192.40 THz. SC-UPC connector. |
NEC |
| 6 |
NX8560SJ581-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. FC-UPC connector. |
NEC |
| 7 |
NX8560SJ581-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1558.173 nm. Frequency 192.40 THz. SC-UPC connector. |
NEC |
| | | |
