| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MJ6302 |
16A High Power NPN Silicon Power Transistor 200W |
Motorola |
| 2 |
NX8560LJ630-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1563.04 nm. Frequency 191.80 THz. FC-UPC connector. |
NEC |
| 3 |
NX8560LJ630-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1563.04 nm. Frequency 191.80 THz. SC-UPC connector. |
NEC |
| 4 |
NX8560SJ630-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1563.047 nm. Frequency 191.80 THz. FC-UPC connector. |
NEC |
| 5 |
NX8560SJ630-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1563.047 nm. Frequency 191.80 THz. SC-UPC connector. |
NEC |
| | | |
