No. |
Part Name |
Description |
Manufacturer |
1 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
2 |
28C256AJC-4 |
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
3 |
28LV256JC-4 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
4 |
28LV256JC-4 |
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
5 |
HSP43168JC-40 |
Dual FIR Filter |
Intersil |
6 |
HSP43168JC-45 |
Dual FIR Filter |
Intersil |
7 |
HSP48212JC-40 |
Digital Video Mixer |
Intersil |
8 |
HSP48410JC-40 |
Histogrammer/Accumulating Buffer |
Intersil |
9 |
K4E640812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
10 |
K4E640812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
11 |
K4E660812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
12 |
K4E660812C-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
13 |
K4F640811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
14 |
K4F660811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
15 |
MT5C2568DJC-45L_883C |
32K x 8 SRAM memory array |
Austin Semiconductor |
16 |
MT5C2568DJC-45L_IT |
32K x 8 SRAM memory array |
Austin Semiconductor |
17 |
MT5C2568DJC-45L_XT |
32K x 8 SRAM memory array |
Austin Semiconductor |
18 |
TC-140-BJC-4PM |
Temperature Compensated Crystal Oscillators (TCXOs) |
Vectron |
19 |
TC-140-CJC-4PM |
Temperature Compensated Crystal Oscillators (TCXOs) |
Vectron |
20 |
UT51C161JC-40 |
64K WORD X 16 BIT EDO DRAM |
UTRON Technology |
21 |
UT51C164JC-40 |
256K X 16 BIT EDO DRAM |
UTRON Technology |
22 |
UT51L164JC-40 |
Access time: 40 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
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