| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256JC-5 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns. |
Turbo IC |
| 2 |
28LV256JC-5 |
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 3 |
BS62LV1029JC-55 |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
| 4 |
HSP43216JC-52 |
Halfband Filter |
Intersil |
| 5 |
HSP50016JC-52 |
Digital Down Converter |
Intersil |
| 6 |
HSP50110JC-52 |
Digital Quadrature Tuner |
Intersil |
| 7 |
HSP50210JC-52 |
Digital Costas Loop |
Intersil |
| 8 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 9 |
K4E640812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 10 |
K4E660812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 11 |
K4E660812C-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
| 12 |
K4F640811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 13 |
K4F660811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 14 |
LTC4089EDJC-5 |
USB Power Manager with High Voltage Switching Charger |
Linear Technology |
| 15 |
LTC4089EDJC-5#PBF |
USB Power Manager with High Voltage Switching Charger |
Linear Technology |
| 16 |
LTC4089EDJC-5#TR |
USB Power Manager with High Voltage Switching Charger |
Linear Technology |
| 17 |
LTC4089EDJC-5#TRPBF |
USB Power Manager with High Voltage Switching Charger |
Linear Technology |
| 18 |
LTC4090EDJC-5#PBF |
USB Power Manager with 2A High Voltage Bat-Track Buck Regulator |
Linear Technology |
| 19 |
LTC4090EDJC-5#TRPBF |
USB Power Manager with 2A High Voltage Bat-Track Buck Regulator |
Linear Technology |
| 20 |
MT5C2568DJC-55L_883C |
32K x 8 SRAM memory array |
Austin Semiconductor |
| 21 |
MT5C2568DJC-55L_IT |
32K x 8 SRAM memory array |
Austin Semiconductor |
| 22 |
MT5C2568DJC-55L_XT |
32K x 8 SRAM memory array |
Austin Semiconductor |
| 23 |
STC62WV1024JC-55 |
VERY LOW POWER VOLTAGE CMOS SRAM |
etc |
| 24 |
TC-140-BJC-507 |
Temperature Compensated Crystal Oscillators (TCXOs) |
Vectron |
| 25 |
TC-140-CJC-507 |
Temperature Compensated Crystal Oscillators (TCXOs) |
Vectron |
| 26 |
UT51C161JC-50 |
64K WORD X 16 BIT EDO DRAM |
UTRON Technology |
| 27 |
UT51C164JC-50 |
256K X 16 BIT EDO DRAM |
UTRON Technology |
| 28 |
UT51L164JC-50 |
Access time: 50 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
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