| No. |
Part Name |
Description |
Manufacturer |
| 1 |
28LV256JC-6 |
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. |
Turbo IC |
| 2 |
28LV256JC-6 |
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
| 3 |
HR11-9BJC-6P |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 4 |
HR11-9BJC-6S |
HR11 SERIES SHELL SIZE 9mm BAYONET LOCK CONNECTORS |
Hirose Electric |
| 5 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 6 |
K4E640812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 7 |
K4E660812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 8 |
K4E660812C-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
| 9 |
K4F640811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 10 |
K4F660811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 11 |
UT51C161JC-60 |
64K WORD X 16 BIT EDO DRAM |
UTRON Technology |
| 12 |
UT51C164JC-60 |
256K X 16 BIT EDO DRAM |
UTRON Technology |
| 13 |
UT51L164JC-60 |
Access time: 60 ns, 256 K x 16 Bit EDO DRAM |
UTRON Technology |
| | | |
