| No. |
Part Name |
Description |
Manufacturer |
| 1 |
25JC12 |
Silicon diffused junction rectifier 25A 600V |
TOSHIBA |
| 2 |
3JC12 |
General-Purpose silicon rectifier 3A |
TOSHIBA |
| 3 |
3JC12 |
Silicon diffused junction rectifier 3A 600V |
TOSHIBA |
| 4 |
6JC12 |
General-Purpose silicon rectifier 6A |
TOSHIBA |
| 5 |
6JC12 |
Silicon diffused junction rectifier 6A 600V |
TOSHIBA |
| 6 |
K6R1008C1A-JC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 7 |
K6R1008C1C-JC12 |
128K x 8 high speed static RAM, 5V operating, 12ns |
Samsung Electronic |
| 8 |
TMS320C6211GJC120 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
| 9 |
TMS320C6711GJC120 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
| 10 |
WCFS0808V1E-JC12 |
32K x 8 3.3V Static RAM |
Weida Semiconductor |
| | | |
