| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AFE58JD16 |
16-Channel, Ultrasound, AFE with 90-mW/Channel Power, 0.95-nV/?Hz Nois 289-NFBGA -40 to 85 |
Texas Instruments |
| 2 |
AFE58JD16ZAV |
16-Channel, Ultrasound, AFE with 90-mW/Channel Power, 0.95-nV/?Hz Nois 289-NFBGA -40 to 85 |
Texas Instruments |
| 3 |
ERG1SJD160L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 4 |
ERG1SJD161L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 5 |
ERG1SJD162L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 6 |
ERG1SJD163L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 7 |
ERG5SJD160L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 8 |
ERG5SJD161L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 9 |
ERG5SJD162L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 10 |
ERG5SJD163L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 11 |
PJD1616ACT |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 12 |
PJD1616ACX |
120V; 1A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 13 |
PJD1616CCT |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 14 |
PJD1616CCX |
120V; 0.5A; NPN epitaxial silicon transistor |
PROMAX-JOHNTON |
| 15 |
TMS320C6211JD167 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
| 16 |
TMS320C6711JD167 |
DIGITAL SIGNAL PROCESSOR |
Texas Instruments |
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