| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AFE58JD18 |
16-Channel, Ultrasound, Analog Front-End with 140-mW/Channel Power, 0.75-nV/?Hz. 289-NFBGA -40 to 85 |
Texas Instruments |
| 2 |
AFE58JD18ZBV |
16-Channel, Ultrasound, Analog Front-End with 140-mW/Channel Power, 0.75-nV/?Hz. 289-NFBGA -40 to 85 |
Texas Instruments |
| 3 |
ERG1SJD180L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 4 |
ERG1SJD181L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 5 |
ERG1SJD182L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 6 |
ERG1SJD183L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 7 |
ERG5SJD180L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 8 |
ERG5SJD181L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 9 |
ERG5SJD182L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 10 |
ERG5SJD183L |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 11 |
MJD18002D2 |
Bipolar NPN Transistor |
ON Semiconductor |
| 12 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
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