No. |
Part Name |
Description |
Manufacturer |
1 |
BS62UV1027JI-10 |
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
2 |
CAT5241JI-10 |
Quad Digitally Programmable Potentiometers (DPP) with 64 Taps and 2-wire Interface |
Catalyst Semiconductor |
3 |
CAT5401JI-10-TE13 |
Quad Digitally Programmable Potentiometers (DPP) with 64 Taps and SPI Interface |
Catalyst Semiconductor |
4 |
CAT5409JI-10-TE13 |
Quad Digitally Programmable Potentiometers (DPPTM) with 64 Taps and 2-wire Interface |
Catalyst Semiconductor |
5 |
CAT5411JI-10-TE13 |
Dual Digitally Programmable Potentiometers (DPP) with 64 Taps and SPI Interface |
Catalyst Semiconductor |
6 |
HI-8582CJI-10 |
ARINC 429 SYSTEM ON A CHIP |
Holt Integrated Circuits |
7 |
HI-8583CJI-10 |
ARINC 429 SYSTEM ON A CHIP |
Holt Integrated Circuits |
8 |
HI-8683PJI-10 |
System component for interfacing incoming ARINC 429 signals to 8-bit parallel data |
Holt Integrated Circuits |
9 |
HI-8684PJI-10 |
ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 8-BIT PARALLEL DATA |
Holt Integrated Circuits |
10 |
HI-8685PJI-10 |
ARINC INTERFACE DEVICE ARINC 429& 561 SERIAL DATA TO 16-BIT PARALLEL DATA |
Holt Integrated Circuits |
11 |
KM681002CJI-10 |
128K x 8 high speed static RAM, 5V operating, 10ns |
Samsung Electronic |
12 |
KM681002CLJI-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
13 |
KM68257EJI-10 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns |
Samsung Electronic |
14 |
PEEL18CV8JI-10 |
CMOS Programmable Electrically Erasable Logic Device |
International CMOS Technology |
15 |
TC55VZM208AJJI-10 |
524,288-WORD BY 8-BIT CMOS STATIC RAM |
TOSHIBA |
16 |
TC55VZM216AJJI-10 |
262,144-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
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