| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HYB314265BJL-45 |
256K x 16-Bit EDO-Dynamic RAM |
Siemens |
| 2 |
KM416C1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 3 |
KM416C1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh |
Samsung Electronic |
| 4 |
KM416V1004CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| 5 |
KM416V1204CJL-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, self-refresh |
Samsung Electronic |
| | | |
