No. |
Part Name |
Description |
Manufacturer |
1 |
HYB314100BJBJL-50 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
2 |
HYB314100BJBJL-50 |
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
3 |
HYB314100BJBJL-50 |
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
4 |
HYB314100BJL-50 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
5 |
HYB314171BJL-50 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
6 |
HYB314175BJL-50 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
7 |
HYB314175BJL-55 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
8 |
HYB314265BJL-50 |
256K x 16-Bit EDO-Dynamic RAM |
Siemens |
9 |
HYB314405BJBJL-50 |
-1M x 4-Bit Dynamic RAM |
Siemens |
10 |
HYB314405BJBJL-50 |
-1M x 4-Bit Dynamic RAM |
Siemens |
11 |
HYB314405BJBJL-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
12 |
HYB314405BJL-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
13 |
HYB511000BJL-50 |
1 M x 1-Bit Dynamic RAM Low Power 1 M �� 1-Bit Dynamic RAM |
Siemens |
14 |
HYB514256BJL-50 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
15 |
HYB514400BJL-50 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
16 |
HYB514405BJL-50 |
1M x 4-Bit Dynamic RAM |
Siemens |
17 |
KM416C1000BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
18 |
KM416C1000CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
19 |
KM416C1004CJL-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
20 |
KM416C1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
21 |
KM416C1200CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
22 |
KM416C1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh |
Samsung Electronic |
23 |
KM416C254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh |
Samsung Electronic |
24 |
KM416V1000BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
25 |
KM416V1000CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
26 |
KM416V1004CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
27 |
KM416V1200BJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
28 |
KM416V1200CJL-5 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
29 |
KM416V1204CJL-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refresh |
Samsung Electronic |
30 |
KM416V254DJL-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh |
Samsung Electronic |
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