No. |
Part Name |
Description |
Manufacturer |
1 |
HYB314100BJL-60 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
2 |
HYB314171BJL-60 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
3 |
HYB314175BJL-60 |
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh |
Siemens |
4 |
HYB314405BJL-60 |
1M x 4-Bit Dynamic RAM |
Siemens |
5 |
HYB511000BJL-60 |
1 M x 1-Bit Dynamic RAM Low Power 1 M �� 1-Bit Dynamic RAM |
Siemens |
6 |
HYB514256BJL-60 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
7 |
HYB514400BJL-60 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
8 |
HYB514400BJL-60 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
9 |
HYB514405BJL-60 |
1M x 4-Bit Dynamic RAM |
Siemens |
10 |
KM416C1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
11 |
KM416C1000CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
12 |
KM416C1004CJL-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
13 |
KM416C1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
14 |
KM416C1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
15 |
KM416C1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh |
Samsung Electronic |
16 |
KM416C254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh |
Samsung Electronic |
17 |
KM416V1000BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
18 |
KM416V1000CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
19 |
KM416V1004CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
20 |
KM416V1200BJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
21 |
KM416V1200CJL-6 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
22 |
KM416V1204CJL-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh |
Samsung Electronic |
23 |
KM416V254DJL-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh |
Samsung Electronic |
24 |
KM44C1000DJL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
25 |
KM44V1000DJL-6 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
26 |
TC514100AJL-60 |
60 ns, 1-bit generation dynamic RAM |
TOSHIBA |
27 |
TC514100ASJL-60 |
60 ns, 1-bit generation dynamic RAM |
TOSHIBA |
28 |
TC514400AJL-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
29 |
TC514400ASJL-60 |
60 ns, 4-bit generation dynamic RAM |
TOSHIBA |
| | | |