No. |
Part Name |
Description |
Manufacturer |
1 |
HYB314100BJL-70 |
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
Siemens |
2 |
HYB314171BJL-70 |
3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
Siemens |
3 |
HYB314405BJL-70 |
1M x 4-Bit Dynamic RAM |
Siemens |
4 |
HYB511000BJL-70 |
1 M x 1-Bit Dynamic RAM Low Power 1 M �� 1-Bit Dynamic RAM |
Siemens |
5 |
HYB514256BJL-70 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM |
Siemens |
6 |
HYB514400BJL-70 |
1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
Siemens |
7 |
HYB514400BJL-70 |
1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
Siemens |
8 |
HYB514405BJL-70 |
1M x 4-Bit Dynamic RAM |
Siemens |
9 |
KM416C1000BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
10 |
KM416C1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
11 |
KM416C254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh |
Samsung Electronic |
12 |
KM416V1000BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
13 |
KM416V1200BJL-7 |
1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
14 |
KM416V254DJL-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh |
Samsung Electronic |
15 |
KM44C1000DJL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
16 |
KM44V1000DJL-7 |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns |
Samsung Electronic |
17 |
TC514100AJL-70 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
18 |
TC514100ASJL-70 |
4,194,304 WORD x BIT DYNAMIC RAM |
TOSHIBA |
19 |
TC514400AJL-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
20 |
TC514400ASJL-70 |
70 ns, 4-bit generation dynamic RAM |
TOSHIBA |
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