| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK216 |
Silicon N Channel MOS FET |
Hitachi Semiconductor |
| 2 |
2SK216 |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 3 |
2SK216 |
Transistors>Amplifiers/MOSFETs |
Renesas |
| 4 |
2SK2160 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 5 |
2SK2161 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 6 |
2SK2162 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
| 7 |
2SK2165-01 |
N-channel MOS-FET |
Fuji Electric |
| 8 |
2SK2166-01R |
N-channel MOS-FET |
Fuji Electric |
| 9 |
2SK2167 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 10 |
2SK2168 |
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications |
SANYO |
| 11 |
2SK2169 |
Very High-Speed Switching Applications |
SANYO |
| 12 |
2SK216K |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 13 |
BUK216-50YT |
TOPFET high side switch SMD version |
Philips |
| 14 |
CCS1933 |
1.85-2.0 GHz, 2 W amplifier chip set (CFK2162-P3) |
CELERITEK |
| 15 |
CFK2162-P1 |
800 to 900 MHz, +34 dBm, power GaAs FET |
CELERITEK |
| 16 |
CFK2162-P1-000T |
800 to 900 MHz, +34 dBm, power GaAs FET |
CELERITEK |
| 17 |
CFK2162-P5 |
2.3 to 2.5 GHz +34 dBm Power GaAs FET |
CELERITEK |
| 18 |
CFK2162-P5-000T |
2.3 to 2.5 GHz +34 dBm Power GaAs FET |
CELERITEK |
| 19 |
K2160B1EB1 |
Single Phase Bridge |
Microsemi |
| 20 |
K2160Z1EB1 |
3 Phase Bridge |
Microsemi |
| | | |
