| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FD400K4E |
RELAIS HERMETIQUE 2 RT DOUBLE COUPURE 10 A/56 Vcc |
etc |
| 2 |
K4E151611 |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 3 |
K4E151611D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 4 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 5 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 6 |
K4E151612D |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 7 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 8 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
| 9 |
K4E16(7)0411(2)D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 10 |
K4E16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 11 |
K4E160411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 12 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 13 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 14 |
K4E160412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 15 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 16 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 17 |
K4E160811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 18 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 19 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 20 |
K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 21 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 22 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 23 |
K4E170411D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 24 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 25 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 26 |
K4E170412D |
4M x 4Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 27 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 28 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 29 |
K4E170811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 30 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| | | |
