DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for K4F160

Datasheets found :: 20
Page: | 1 |
No. Part Name Description Manufacturer
1 K4F160411C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
2 K4F160411C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
3 K4F160411C-F50 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns Samsung Electronic
4 K4F160411C-F60 4M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns Samsung Electronic
5 K4F160411D 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
6 K4F160411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
7 K4F160411D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
8 K4F160412C-B50 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
9 K4F160412C-B60 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
10 K4F160412C-F50 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns Samsung Electronic
11 K4F160412C-F60 4M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns Samsung Electronic
12 K4F160412D 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
13 K4F160412D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
14 K4F160412D-F 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
15 K4F160811D 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
16 K4F160811D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
17 K4F160811D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
18 K4F160812D 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Samsung Electronic
19 K4F160812D-B 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
20 K4F160812D-F 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic


Datasheets found :: 20
Page: | 1 |



© 2024 - www Datasheet Catalog com