No. |
Part Name |
Description |
Manufacturer |
1 |
IRFK4J054 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
2 |
IRFK4J150 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
3 |
IRFK4J250 |
200V SINGLE HEXFET Power MOSFET in a TO-240AA package |
International Rectifier |
4 |
IRFK4J350 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
5 |
IRFK4J450 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
6 |
IRFK4JC50 |
ISOLATED BASE POWER HEX PAK ASSEMBLY PARALLEL CHIP CONFIGURATION |
International Rectifier |
7 |
K4J52324QC |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
8 |
K4J52324QC-BC14 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
9 |
K4J52324QC-BC16 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
10 |
K4J52324QC-BC20 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
11 |
K4J52324QC-BJ12 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
12 |
K4J52324QC-BJ14 |
512Mbit GDDR3 SDRAM |
Samsung Electronic |
13 |
K4J55323QF-GC |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
14 |
K4J55323QF-GC14 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
15 |
K4J55323QF-GC15 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
16 |
K4J55323QF-GC16 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
17 |
K4J55323QF-GC20 |
256Mbit GDDR3 SDRAM |
Samsung Electronic |
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