Datasheets for K4R

Datasheets found :: 76 Page: | 1 | 2 | 3 |

No.	Part Name	Description	Manufacturer
1	EEEFK1K4R7P	ALUMINUM ELEECTROLYTIC CAPACITORS/FK	Panasonic
2	EEEFK1K4R7V	Aluminum Electrolytic Capacitors (Surface Mount Type) FK-V	Panasonic
3	EEVFK1K4R7P	ALUMINUM ELEECTROLYTIC CAPACITORS/FK	Panasonic
4	ERJT14LK4R7U	Anti-Pulse Small & High Power Thick Film Chip Resistors	Panasonic
5	ERU5TCK4R7	Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs	Panasonic
6	K4R271669A	Direct RDRAM	Samsung Electronic
7	K4R271669A-N(M)CK7	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
8	K4R271669A-N(M)CK8	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
9	K4R271669A-NB(M)CCG6	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM	Samsung Electronic
10	K4R271669AM-CG6	256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.	Samsung Electronic
11	K4R271669AM-CK7	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
12	K4R271669AM-CK8	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
13	K4R271669AN-CG6	256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz.	Samsung Electronic
14	K4R271669AN-CK7	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung Electronic
15	K4R271669AN-CK8	256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung Electronic
16	K4R271669B	Direct RDRAM	Samsung Electronic
17	K4R271669B	Direct RDRAM� Data Sheet	Samsung Electronic
18	K4R271669B-MCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
19	K4R271669B-MCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.	Samsung Electronic
20	K4R271669B-MCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.	Samsung Electronic
21	K4R271669B-N(M)CG6	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
22	K4R271669B-N(M)CK7	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
23	K4R271669B-NB(M)CCK8	256K x 16/18 bit x 32s banks Direct RDRAMTM	Samsung Electronic
24	K4R271669B-NCG6	256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.	Samsung Electronic
25	K4R271669B-NCK7	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz	Samsung Electronic
26	K4R271669B-NCK8	256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz	Samsung Electronic
27	K4R271669D	Direct RDRAM� Data Sheet	Samsung Electronic
28	K4R271669D-T	128Mbit RDRAM(D-die)	Samsung Electronic
29	K4R271669D-TCS8	128Mbit RDRAM(D-die)	Samsung Electronic
30	K4R271669E	128Mbit RDRAM(E-die)	Samsung Electronic

Datasheets found :: 76 Page: | 1 | 2 | 3 |