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Datasheets for K4R

Datasheets found :: 76
Page: | 1 | 2 | 3 |
No. Part Name Description Manufacturer
1 EEEFK1K4R7P ALUMINUM ELEECTROLYTIC CAPACITORS/FK Panasonic
2 EEEFK1K4R7V Aluminum Electrolytic Capacitors (Surface Mount Type) FK-V Panasonic
3 EEVFK1K4R7P ALUMINUM ELEECTROLYTIC CAPACITORS/FK Panasonic
4 ERJT14LK4R7U Anti-Pulse Small & High Power Thick Film Chip Resistors Panasonic
5 ERU5TCK4R7 Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs Panasonic
6 K4R271669A Direct RDRAM Samsung Electronic
7 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
8 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
9 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
10 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
11 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
12 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
13 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
14 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
15 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
16 K4R271669B Direct RDRAM Samsung Electronic
17 K4R271669B Direct RDRAM� Data Sheet Samsung Electronic
18 K4R271669B-MCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
19 K4R271669B-MCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. Samsung Electronic
20 K4R271669B-MCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. Samsung Electronic
21 K4R271669B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
22 K4R271669B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
23 K4R271669B-NB(M)CCK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
24 K4R271669B-NCG6 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. Samsung Electronic
25 K4R271669B-NCK7 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz Samsung Electronic
26 K4R271669B-NCK8 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz Samsung Electronic
27 K4R271669D Direct RDRAM� Data Sheet Samsung Electronic
28 K4R271669D-T 128Mbit RDRAM(D-die) Samsung Electronic
29 K4R271669D-TCS8 128Mbit RDRAM(D-die) Samsung Electronic
30 K4R271669E 128Mbit RDRAM(E-die) Samsung Electronic


Datasheets found :: 76
Page: | 1 | 2 | 3 |



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