No. |
Part Name |
Description |
Manufacturer |
1 |
K4R441869A |
Direct RDRAM |
Samsung Electronic |
2 |
K4R441869A-N(M) |
K4R271669A-N(M):Direct RDRAM� Data Sheet |
Samsung Electronic |
3 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
4 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
5 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
6 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
7 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
8 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
9 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
10 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
11 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
12 |
K4R441869B |
Direct RDRAM |
Samsung Electronic |
13 |
K4R441869B |
K4R271669B:Direct RDRAM� Data Sheet |
Samsung Electronic |
14 |
K4R441869B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
15 |
K4R441869B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
16 |
K4R441869B-N(M)CK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| | | |