| No. |
Part Name |
Description |
Manufacturer |
| 1 |
EEEFK1K4R7P |
ALUMINUM ELEECTROLYTIC CAPACITORS/FK |
Panasonic |
| 2 |
EEEFK1K4R7V |
Aluminum Electrolytic Capacitors (Surface Mount Type) FK-V |
Panasonic |
| 3 |
EEVFK1K4R7P |
ALUMINUM ELEECTROLYTIC CAPACITORS/FK |
Panasonic |
| 4 |
ERJT14LK4R7U |
Anti-Pulse Small & High Power Thick Film Chip Resistors |
Panasonic |
| 5 |
ERU5TCK4R7 |
Leaded Resistors - Wirewound Resistor with Thermal Cut-Offs |
Panasonic |
| 6 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
| 7 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 8 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 9 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 10 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 11 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 12 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 13 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| | | |
