| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2SK578 |
OUT LINE BQUIVALRN CIRCUIT |
TOSHIBA |
| 2 |
2SK579 |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 3 |
2SK579L |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 4 |
2SK579L |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 5 |
2SK579S |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
| 6 |
2SK579S |
HIGH SPEED POWER SWITCHING |
Hitachi Semiconductor |
| 7 |
BD48K57G |
Standard Voltage Detectors |
ROHM |
| 8 |
BD48K57G-TL |
Standard Voltage Detectors |
ROHM |
| 9 |
BD49K57G |
Standard Voltage Detectors |
ROHM |
| 10 |
BD49K57G-TL |
Standard Voltage Detectors |
ROHM |
| 11 |
BUK573-48C |
PowerMOS transistor Clamped logic level FET |
Philips |
| 12 |
BUK573-60A |
PowerMOS transistor Logic level FET |
Philips |
| 13 |
BUK573-60B |
PowerMOS transistor Logic level FET |
Philips |
| 14 |
BUK574-60H |
PowerMOS transistor Logic level FET |
Philips |
| 15 |
IRHMK57160 |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package |
International Rectifier |
| 16 |
IRHMK57160SCS |
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA Tabless package |
International Rectifier |
| 17 |
IRHMK57260SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-254AA Tabless package |
International Rectifier |
| 18 |
IRHYK57133CMSE |
130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
International Rectifier |
| 19 |
NX6508GK57 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). |
NEC |
| 20 |
SK57S |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
EIC discrete Semiconductors |
| 21 |
TMS320LBC57PBK57 |
Digital Signal Processor 128-LQFP |
Texas Instruments |
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