No. |
Part Name |
Description |
Manufacturer |
1 |
BUK6E2R0-30C |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
2 |
BUK6E2R3-40C |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
3 |
BUK6E3R2-55C |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
4 |
BUK6E3R4-40C |
N-channel TrenchMOS intermediate level FET |
NXP Semiconductors |
5 |
BUK6E4R0-75C |
N-channel TrenchMOS FET |
NXP Semiconductors |
6 |
K6E0808C1C |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
7 |
K6E0808C1C-12 |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
8 |
K6E0808C1C-15 |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
9 |
K6E0808C1C-20 |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
10 |
K6E0808C1C-C |
32Kx8 Bit High Speed CMOS Static RAM |
Samsung Electronic |
11 |
K6E0808C1E |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
12 |
K6E0808C1E-C |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
13 |
K6E0808C1E-C10 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
14 |
K6E0808C1E-C12 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
15 |
K6E0808C1E-C15 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
16 |
K6E0808C1E-I |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
17 |
K6E0808C1E-I10 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
18 |
K6E0808C1E-I12 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
19 |
K6E0808C1E-I15 |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
20 |
K6E0808C1E-L |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
21 |
K6E0808C1E-P |
32K x 8 Bit High-Speed CMOS Static RAM |
Samsung Electronic |
22 |
K6EB-110V |
K-relay. Uniquely designed relay. 6 form C. Coil voltage 110 V DC. Plug-in and solder. High sensitivity relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
23 |
M27W512-100K6E |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
24 |
M27W512-120K6E |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
25 |
M27W512-150K6E |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
26 |
M27W512-200K6E |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
27 |
M27W512-80K6E |
512 Kbit (64K x8) Low Voltage UV EPROM and OTP EPROM |
ST Microelectronics |
28 |
TMS320DM642GDK6E3 |
Video/Imaging Fixed-Point Digital Signal Processor |
Texas Instruments |
29 |
TMS32C6414DGLZK6E3 |
Fixed-Point Digital Signal Processor 532-FCBGA |
Texas Instruments |
30 |
TMS32C6415DGLZK6E3 |
Fixed-Point Digital Signal Processor 532-FCBGA |
Texas Instruments |
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