Datasheets for KAM

Datasheets found :: 12 Page: | 1 |

No.	Part Name	Description	Manufacturer
1	MAX6725KAMRD3-T	Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
2	MAX6725KAMSD3-T	Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
3	MAX6726KAMRD3-T	Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
4	MAX6726KAMSD3-T	Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
5	MAX6727KAMRD3-T	Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
6	MAX6727KAMSD3-T	Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
7	MAX6728KAMRD3-T	Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
8	MAX6728KAMSD3-T	Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
9	MAX6729KAMRD3-T	Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
10	MAX6729KAMSD3-T	Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit	MAXIM - Dallas Semiconductor
11	NJ88C25KAMP	FREQUENCY SYNTHESISER (MICROPROCESSOR SERIAL INTERFACE)	Zarlink Semiconductor
12	NJ88C30KAMP	VHF SYNTHESISER	Zarlink Semiconductor

Datasheets found :: 12 Page: | 1 |