No. |
Part Name |
Description |
Manufacturer |
1 |
AP1084KL-13 |
5A Low Dropout Positive Adjustable or FixedMode Regulator |
Diodes |
2 |
AP1086KL-13 |
1.5A Low Dropout Positive Adjustable or Fixed-Mode Regulator |
Diodes |
3 |
AP1117KL-13 |
1A Dropout Positive Adjustable or Fixed Mode Regulator |
Diodes |
4 |
AP1122KL-13 |
1A Low Dropout Positive Regulator |
Diodes |
5 |
AP1122KL-U |
1A Low Dropout Positive Regulator |
Diodes |
6 |
BS107KL-TR1 |
N-Channel 240 -V (D-S) MOSFET |
Vishay |
7 |
FAR-F5CH-897M50-L2KL-R |
Piezoelectric SAW BPF (700 to 1000 MHz) |
Fujitsu Microelectronics |
8 |
FAR-F5CH-897M50-L2KL-T |
Piezoelectric SAW BPF (700 to 1000 MHz) |
Fujitsu Microelectronics |
9 |
KL-150UYG |
SMD HANDLING AND APPLICATION PRECAUTIONS |
Cosmo Electronics |
10 |
KM44C4000CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
11 |
KM44C4000CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
12 |
KM44C4003CKL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
13 |
KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
14 |
KM44C4005CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
15 |
KM44C4005CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
16 |
KM44C4100CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
17 |
KM44C4100CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
18 |
KM44C4103CKL-5 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 50ns |
Samsung Electronic |
19 |
KM44C4103CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns |
Samsung Electronic |
20 |
KM44C4105CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
21 |
KM44C4105CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
22 |
KM44V4000CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
23 |
KM44V4000CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
24 |
KM44V4100CKL-5 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 50ns |
Samsung Electronic |
25 |
KM44V4100CKL-6 |
4M x 4Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns |
Samsung Electronic |
26 |
KM48C2000BKL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
27 |
KM48C2000BKL-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
28 |
KM48C2000BKL-7 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 70ns |
Samsung Electronic |
29 |
KM48C2100BKL-5 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
30 |
KM48C2100BKL-6 |
2M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
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