No. |
Part Name |
Description |
Manufacturer |
1 |
HX6356KVFC |
32K x 8 STATIC RAM-SOI |
Honeywell Sensing |
2 |
HX6356KVFT |
32K x 8 STATIC RAM-SOI |
Honeywell Sensing |
3 |
HX6656KVFC |
32K x 8 ROM-SOI |
Honeywell Sensing |
4 |
HX6656KVFT |
32K x 8 ROM-SOI |
Honeywell Sensing |
5 |
IRKVF180-04HJ |
400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
6 |
IRKVF180-04HK |
400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
7 |
IRKVF180-08HJ |
800V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
8 |
IRKVF180-08HK |
800V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
9 |
IRKVF180-12HJ |
1200V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
10 |
IRKVF180-12HK |
1200V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
11 |
IRKVF200-04HJ |
400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
12 |
IRKVF200-04HK |
400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
13 |
IRKVF200-08HJ |
800V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
14 |
IRKVF200-08HK |
800V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
15 |
IRKVF200-12HJ |
1200V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
16 |
IRKVF200-12HK |
1200V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package |
International Rectifier |
17 |
MAX6717UKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
18 |
MAX6718UKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
19 |
MAX6736XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
20 |
MAX6737XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
21 |
MAX6740XKVFD3+ |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
22 |
MAX6740XKVFD3+T |
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
23 |
MAX6740XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
24 |
MAX6741XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
25 |
MAX6743XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
26 |
MAX6744XKVFD3-T |
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
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