| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1242 (RJ26 STYLE) |
Bulk Metal Foil Technology, Precision Trimming Potentiometers, QPL Approved 1/4 Inch Square, Qualified to Mil-PRF-22097, Char. F, RJ26 |
Vishay |
| 2 |
1AS027 |
Silicon rectifier with avalanche character 1.5A 800V, approved under CV7645 for MIL applications |
Texas Instruments |
| 3 |
1AS029 |
Silicon rectifier with avalanche character 1.5A 1000V, approved under CV7645 for MIL applications |
Texas Instruments |
| 4 |
1N4001 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 5 |
1N4001 |
V(rrm): 50V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 6 |
1N4002 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 7 |
1N4002 |
V(rrm): 100V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 8 |
1N4003 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 9 |
1N4003 |
V(rrm): 200V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 10 |
1N4004 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 11 |
1N4004 |
V(rrm): 400V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 12 |
1N4005 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 13 |
1N4005 |
V(rrm): 600V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 14 |
1N4006 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 15 |
1N4006 |
V(rrm): 800V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 16 |
1N4007 |
Silicon diffusion diode for low power general applications |
AEG-TELEFUNKEN |
| 17 |
1N4007 |
V(rrm): 1000V; 1A silicon rectifier diode. For industrial application |
International Rectifier |
| 18 |
1N4149 |
Silicon epitaxial planar diode, communication and industrial applications, ultra high speed switching |
TOSHIBA |
| 19 |
1S1314 |
Silicon planar diode, communication and industrial applications, Low-Level Modulation |
TOSHIBA |
| 20 |
2DI100D-050 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 21 |
2DI100Z-100 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 22 |
2DI100Z-120 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 23 |
2DI150D-050 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 24 |
2DI150Z-100 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 25 |
2DI150Z-120 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 26 |
2DI200D-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 27 |
2DI30D-050A |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 28 |
2DI30Z-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 29 |
2DI30Z-120 |
Power transistor module for high power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 30 |
2DI50D-050A |
Power transistor module for high power switching, DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| | | |
