No. |
Part Name |
Description |
Manufacturer |
1 |
1N4383GP |
200 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
2 |
1N4384GP |
400 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
3 |
1N4385GP |
600 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
4 |
1N4585GP |
800 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
5 |
1N4586GP |
1000 V, 1 A, miniature glass passivated junction plastic rectifier |
General Instruments |
6 |
1N5614 |
200 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
7 |
1N5616 |
400 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
8 |
1N5618 |
600 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
9 |
1N5620 |
800 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
10 |
1N5622 |
1000 V, 1 A, miniature glass passivated junction medium-switching rectifier |
General Instruments |
11 |
1N5624GP |
200 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
12 |
1N5625GP |
400 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
13 |
1N5626GP |
600 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
14 |
1N5627GP |
800 V, 3 A, glass passivated junction plastic rectifier |
General Instruments |
15 |
3N128 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
16 |
3N140 |
Silicon n channel field effect transistor dual insulated GATE FET (Tetrode MOST), |
Mullard |
17 |
3N141 |
Silicon n channel field effect transistor, dual insulated GATE FET (Tetrode MOST) |
Mullard |
18 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
19 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
20 |
3N187 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Vaishali Semiconductor |
21 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
22 |
3N200 |
SILICON DUAL INSULATED-GATE FIELD-EFFECT TRANSISTOR |
Intersil |
23 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
24 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
25 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
26 |
40600 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
27 |
40601 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
28 |
40602 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
29 |
40603 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
30 |
40604 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor |
RCA Solid State |
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