No. |
Part Name |
Description |
Manufacturer |
1 |
IS61LV12816L-10LQ |
128K x 16 high-speed CMOS static RAM, 3.3V, 10ns |
Integrated Silicon Solution Inc |
2 |
IS61LV12816L-10LQI |
128K x 16 high-speed CMOS static RAM, 3.3V, 10ns |
Integrated Silicon Solution Inc |
3 |
IS61LV25616AL-10LQ |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
4 |
IS61LV25616AL-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
5 |
KIM684000L-10L |
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM |
Samsung Electronic |
6 |
TC55257BFL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
7 |
TC55257BFTL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
8 |
TC55257BPL-10L |
SILICON GATE CMOS 32,768 WORD X 8 BIT STATIC RAM |
TOSHIBA |
9 |
TC55257BSPL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
10 |
TC55257BTRL-10L |
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM |
TOSHIBA |
11 |
TC554161FTL-10L |
262,144-WORD BY 16 BIT STATIC RAM |
TOSHIBA |
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