| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1011-050 |
High Power Class C transistor specifically designed for L-Band Avionics transponder/interrogator pulsed output and driver applications |
SGS Thomson Microelectronics |
| 2 |
1011-055 |
High Power Class C transistor, designed for L-Band Avionics transponder/interrogator output and driver applications |
SGS Thomson Microelectronics |
| 3 |
1011-060 |
High power Class C transistor designed for L-Band Avionics transponder/interrogator pulsed output |
SGS Thomson Microelectronics |
| 4 |
1011-225 |
High power Class C transistor designed for L-Band Avionics applications |
SGS Thomson Microelectronics |
| 5 |
1011-350 |
High power Class C transistor designed for L-Band Avionics Mode-S transponder/interrogator applications |
SGS Thomson Microelectronics |
| 6 |
1014-12 |
Pulsed Power L-Band (Si) |
Microsemi |
| 7 |
1014-2 |
Pulsed Power L-Band (Si) |
Microsemi |
| 8 |
1014-6A |
Pulsed Power L-Band (Si) |
Microsemi |
| 9 |
1214-110M |
Pulsed Power L-Band (Si) |
Microsemi |
| 10 |
1214-110V |
Pulsed Power L-Band (Si) |
Microsemi |
| 11 |
1214-150L |
Pulsed Power L-Band (Si) |
Microsemi |
| 12 |
1214-220M |
Pulsed Power L-Band (Si) |
Microsemi |
| 13 |
1214-30 |
Pulsed Power L-Band (Si) |
Microsemi |
| 14 |
1214-300 |
Pulsed Power L-Band (Si) |
Microsemi |
| 15 |
1214-300M |
Pulsed Power L-Band (Si) |
Microsemi |
| 16 |
1214-300V |
Pulsed Power L-Band (Si) |
Microsemi |
| 17 |
1214-32L |
Pulsed Power L-Band (Si) |
Microsemi |
| 18 |
1214-370M |
Pulsed Power L-Band (Si) |
Microsemi |
| 19 |
1214-370V |
Pulsed Power L-Band (Si) |
Microsemi |
| 20 |
1214-55 |
Pulsed Power L-Band (Si) |
Microsemi |
| 21 |
1214-550P |
Pulsed Power L-Band (Si) |
Microsemi |
| 22 |
1214-700P |
Pulsed Power L-Band (Si) |
Microsemi |
| 23 |
1214-700P1 |
Pulsed Power L-Band (Si) |
Microsemi |
| 24 |
1214-800P |
Pulsed Power L-Band (Si) |
Microsemi |
| 25 |
1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 26 |
1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 27 |
1617-35 |
Pulsed Power L-Band (Si) |
Microsemi |
| 28 |
2N3055E |
Silicon epitaxial-base NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
| 29 |
2N3713 |
80V Epitaxial-base NPN-PNP |
Comset Semiconductors |
| 30 |
2N3713 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| | | |
