No. |
Part Name |
Description |
Manufacturer |
1 |
IDT5T93GL10NLI |
2.5V LVDS 1:10 Glitchless Clock Buffer TeraBuffer II |
IDT |
2 |
IDT5T93GL10NLI8 |
2.5V LVDS 1:10 Glitchless Clock Buffer TeraBuffer II |
IDT |
3 |
LL1608-FSL10NJ |
Multilayer Chip Inductors |
TOKO |
4 |
LL2012-FHL10NJ |
Multilayer Chip Inductors |
TOKO |
5 |
LL2012-FHL10NJ |
Multilayer Chip Inductors |
TOKO |
6 |
M29W641DL10N1E |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
7 |
M29W641DL10N1E |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory |
ST Microelectronics |
8 |
M29W641DL10N1F |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
9 |
M29W641DL10N1F |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory |
ST Microelectronics |
10 |
M29W641DL10N1T |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
11 |
M29W641DL10N1T |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory |
ST Microelectronics |
12 |
M29W641DL10N6E |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
13 |
M29W641DL10N6E |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory |
ST Microelectronics |
14 |
M29W641DL10N6F |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
15 |
M29W641DL10N6F |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory |
ST Microelectronics |
16 |
M29W641DL10N6T |
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory |
SGS Thomson Microelectronics |
17 |
M29W641DL10N6T |
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory |
ST Microelectronics |
18 |
M68AW127BL10N1T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
19 |
M68AW127BL10N1T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
ST Microelectronics |
20 |
M68AW127BL10N6T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
21 |
M68AW127BL10N6T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
ST Microelectronics |
22 |
M68AW127BL10NK1T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
23 |
M68AW127BL10NK1T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
ST Microelectronics |
24 |
M68AW127BL10NK6T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
SGS Thomson Microelectronics |
25 |
M68AW127BL10NK6T |
1Mbit 128K x8, 3.0V Asynchronous SRAM |
ST Microelectronics |
26 |
STL10N3LLH5 |
N-channel 30 V, 0.015 Ohm, 9 A, PowerFLAT(TM) 3.3x3.3 STripFET(TM) V Power MOSFET |
ST Microelectronics |
27 |
STL10N60M2 |
N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh II Plus(TM) low Qg Power MOSFET in a PowerFLAT(TM) 5x6 HV package |
ST Microelectronics |
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