| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRLB3813 |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2 |
IRLB3813PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 3 |
ISPLSI5384VA-100LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 4 |
ISPLSI5384VA-125LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 5 |
ISPLSI5384VA-70LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 6 |
ISPLSI5512VA-100LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 7 |
ISPLSI5512VA-110LB388 |
110 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 8 |
ISPLSI5512VA-125LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 9 |
ISPLSI5512VA-70LB388 |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
| 10 |
ISPLSI5512VA-70LB388I |
70 MHz in-system prommable 3.3V superWIDE high density PLD |
Lattice Semiconductor |
| 11 |
ISPLSI5512VE-100LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 12 |
ISPLSI5512VE-100LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns. |
Lattice Semiconductor |
| 13 |
ISPLSI5512VE-125LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 14 |
ISPLSI5512VE-125LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns. |
Lattice Semiconductor |
| 15 |
ISPLSI5512VE-155LB388 |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 155 MHz, tpd 6.5 ns. |
Lattice Semiconductor |
| 16 |
ISPLSI5512VE-80LB388I |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns. |
Lattice Semiconductor |
| 17 |
NX8562LB381-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. Anode ground. FC-PC connector. |
NEC |
| 18 |
NX8562LB389-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1538.97 nm. Frequency 194.80 THz. Anode ground. FC-PC connector. |
NEC |
| 19 |
NX8563LB381-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1538.18 nm. Frequency 194.90 THz. FC-PC connector. Anode ground. |
NEC |
| 20 |
NX8563LB389-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1538.89 nm. Frequency 194.80 THz. FC-PC connector. Anode ground. |
NEC |
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