| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IRLB4030 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 2 |
IRLB4030PBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 3 |
LB401 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR |
Polyfet RF Devices |
| 4 |
NX8562LB405-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1540.55 nm. Frequency 194.60 THz. Anode ground. FC-PC connector. |
NEC |
| 5 |
NX8563LB405 |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 6 |
NX8563LB405-BA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 7 |
NX8563LB405-CA |
CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE FOR D-WDM APPLICATIONS |
NEC |
| 8 |
VLB40-12F |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 9 |
VLB40-12S |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| | | |
