No. |
Part Name |
Description |
Manufacturer |
1 |
0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
2 |
0405-30 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
3 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
4 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
5 |
1526-1 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
6 |
1526-8 |
Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications |
SGS Thomson Microelectronics |
7 |
1527-8 |
Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications |
SGS Thomson Microelectronics |
8 |
2N7002XFB |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
9 |
AL422 |
3M-Bits FIFO Field Memory |
AVERLOGIC |
10 |
AL422B |
3M-bits FIFO field memory |
AVERLOGIC |
11 |
AL422V3 |
3M-bits FIFO field memory |
AVERLOGIC |
12 |
AL422V5 |
3M-bits FIFO field memory |
AVERLOGIC |
13 |
AL440B |
4MBits FIFO Field Memory |
AVERLOGIC |
14 |
AL440B-24 |
4M-bits FIFO field memory |
AVERLOGIC |
15 |
AM0405-030 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W |
SGS Thomson Microelectronics |
16 |
AM0405-100 |
Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W |
SGS Thomson Microelectronics |
17 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
18 |
BA668A |
12-Point Fluorescent Display Tube VU Scale Peak Hold Meter Driver |
ROHM |
19 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
20 |
BSN20 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
21 |
BSN20-7 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
22 |
BSS127S |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
23 |
BSS127S-7 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
24 |
BSS127SSN |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
25 |
BSS127SSN-7 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
26 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
27 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
28 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
29 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
30 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
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