| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N7002XFB |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 2 |
AL422 |
3M-Bits FIFO Field Memory |
AVERLOGIC |
| 3 |
AL422B |
3M-bits FIFO field memory |
AVERLOGIC |
| 4 |
AL422V3 |
3M-bits FIFO field memory |
AVERLOGIC |
| 5 |
AL422V5 |
3M-bits FIFO field memory |
AVERLOGIC |
| 6 |
AL440B |
4MBits FIFO Field Memory |
AVERLOGIC |
| 7 |
AL440B-24 |
4M-bits FIFO field memory |
AVERLOGIC |
| 8 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
| 9 |
BSN20 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 10 |
BSN20-7 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 11 |
BSS127S |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 12 |
BSS127S-7 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 13 |
BSS127SSN |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 14 |
BSS127SSN-7 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
Diodes |
| 15 |
CFY25 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 16 |
CFY25-17 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 17 |
CFY25-20 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 18 |
CFY25-23 |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Siemens |
| 19 |
CGY31 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) |
Siemens |
| 20 |
CGY52 |
GaAs MMIC (Two stages monolithic microwave IC MMICAmplifier All gold metallisation) |
Siemens |
| 21 |
D1001UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 22 |
D1014 |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET |
etc |
| 23 |
D1024UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 500MHz PUSH?PULL |
SemeLAB |
| 24 |
D1025UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W - 28V - 175MHz SINGLE ENDED |
SemeLAB |
| 25 |
D1221UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 12.5V - 175MHz SINGLE ENDED |
SemeLAB |
| 26 |
D1222UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W - 12.5V - 175MHz PUSH-PULL |
SemeLAB |
| 27 |
D2204UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 12.5V - 900MHz SINGLE ENDED |
SemeLAB |
| 28 |
D2205UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| 29 |
D2208UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 12.5V - 500MHz PUSH-PULL |
SemeLAB |
| 30 |
D2290UK |
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1W - 12.5V - 1GHz SINGLE ENDED |
SemeLAB |
| | | |
