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Datasheets for LD M

Datasheets found :: 1272
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
2 0405-30 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
3 0710-300 High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications SGS Thomson Microelectronics
4 1511-8 Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz SGS Thomson Microelectronics
5 1526-1 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
6 1526-8 Gold metallized silicon NPN power RF transistor designed for IFF, DME, TACAN applications SGS Thomson Microelectronics
7 1527-8 Gold metallized silicon NPN power RF transistor designed for IFF and TACAN applications SGS Thomson Microelectronics
8 2N7002XFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
9 AL422 3M-Bits FIFO Field Memory AVERLOGIC
10 AL422B 3M-bits FIFO field memory AVERLOGIC
11 AL422V3 3M-bits FIFO field memory AVERLOGIC
12 AL422V5 3M-bits FIFO field memory AVERLOGIC
13 AL440B 4MBits FIFO Field Memory AVERLOGIC
14 AL440B-24 4M-bits FIFO field memory AVERLOGIC
15 AM0405-030 Gold metallized silicon NPN pulse power transistor, 420-450MHz 30W SGS Thomson Microelectronics
16 AM0405-100 Gold metallized silicon NPN pulse power transistor, 420-450MHz 100W SGS Thomson Microelectronics
17 AM0710-300 High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications SGS Thomson Microelectronics
18 BA668A 12-Point Fluorescent Display Tube VU Scale Peak Hold Meter Driver ROHM
19 BFR91A NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization Philips
20 BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
21 BSN20-7 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
22 BSS127S N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
23 BSS127S-7 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
24 BSS127SSN N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
25 BSS127SSN-7 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Diodes
26 CFY25 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
27 CFY25-17 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
28 CFY25-20 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
29 CFY25-23 GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) Siemens
30 CGY31 GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier All-gold metallization Chip fully passivated) Siemens


Datasheets found :: 1272
Page: | 1 | 2 | 3 | 4 | 5 |



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