| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFP90A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 2 |
BFP91A |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 3 |
BFP96 |
NPN gold-metallized 1GHz broadband transistor, low noise, high gain and low distorsion |
Philips |
| 4 |
BFQ23C |
Silicon planar epitaxial gold-metallized PNP transistor in a sub-miniature HERMETICALLY SEALED micro-stripline envelope |
Philips |
| 5 |
BFQ32C |
Gold-metallized PNP silicon RF transistor |
Philips |
| 6 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
| 7 |
DAC1230LD-MSP |
DAC1208/DAC1209/DAC1210/DAC1230/DAC1231/DAC1232 12-Bit, Microprocessor Compatible, Double Buffered D/A Converter |
National Semiconductor |
| 8 |
NE5511279A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 9 |
NE5511279A-T1 |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 10 |
NE5511279A-T1A |
NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
NEC |
| 11 |
NE5520279A |
NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 12 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
NEC |
| 13 |
NE5520379A-T1A |
NEC's 3.2 V, 3 W, L/S band medium power silicon LD-MOSFET. |
NEC |
| 14 |
NE552R479A-T1A |
NEC's 3.0 V, 0.25 W, L&S-band medium power silicon LD-MOSFET. |
NEC |
| 15 |
RCA0610-30 |
30-W, Broadband, 620-to-960-MHz, Emitter-Ballasted, Gold-Metallized NPN RF Power Transistor |
RCA Solid State |
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