| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N2830 |
Diode Zener Single 50V 20% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 2 |
1N2830A |
Diode Zener Single 50V 10% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 3 |
1N2830B |
Diode Zener Single 50V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 4 |
1N2830C |
Diode Zener Single 50V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 5 |
1N2830D |
Diode Zener Single 50V 5% 50W 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 6 |
1N2996 |
Diode Zener Single 50V 20% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 7 |
1N2996A |
Diode Zener Single 50V 10% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 8 |
1N2996B |
Diode Zener Single 50V 5% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 9 |
1N2996C |
Diode Zener Single 50V 5% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 10 |
1N2996D |
Diode Zener Single 50V 5% 10W 2-Pin DO-4 |
New Jersey Semiconductor |
| 11 |
1N3331 |
Diode Zener Single 50V 20% 50W 2-Pin DO-5 |
New Jersey Semiconductor |
| 12 |
1N3331A |
Diode Zener Single 50V 10% 50W 2-Pin DO-5 |
New Jersey Semiconductor |
| 13 |
1N3331B |
Diode Zener Single 50V 5% 50W 2-Pin DO-5 |
New Jersey Semiconductor |
| 14 |
1N5085 |
Diode Zener Single 50V 5% 3W 2-Pin Case A |
New Jersey Semiconductor |
| 15 |
250JB05L |
Diode Rectifier Bridge Single 50V 25A 4-Pin D-34A |
New Jersey Semiconductor |
| 16 |
2KBP005M |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 17 |
2KBP0M |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBP |
New Jersey Semiconductor |
| 18 |
35MB05A |
Diode Rectifier Bridge Single 50V 35A 4-Pin D-34A |
New Jersey Semiconductor |
| 19 |
3N246 |
Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM |
New Jersey Semiconductor |
| 20 |
3N253 |
Diode Rectifier Bridge Single 50V 2A 4-Pin Case KBPM Rail |
New Jersey Semiconductor |
| 21 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 22 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 23 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 24 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 25 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 26 |
CGY50 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 �� gain block) |
Siemens |
| 27 |
CM50BU-24H |
Four IGBTMOD�� U-Series Module 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 28 |
CM50DU-24H |
Dual IGBTMOD�� U-Series Module 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 29 |
ISL6525 |
PWM Controller, VOUT 1.20V Min @ �1% Reg, +5V or +12V Supply, 200kHz Free-Running Osc Programmable 50kHz to 1+MHz |
Intersil |
| 30 |
KBL005 |
Diode Rectifier Bridge Single 50V 4A 4-Pin Case KBL Bulk |
New Jersey Semiconductor |
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