| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 2 |
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 3 |
BGA318 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 4 |
BGA420 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 5 |
BGA427 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 6 |
CGY50 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 �� gain block) |
Siemens |
| 7 |
CM50BU-24H |
Four IGBTMOD�� U-Series Module 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 8 |
CM50DU-24H |
Dual IGBTMOD�� U-Series Module 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 9 |
LM2416 |
Triple 50 MHz CRT Driver |
National Semiconductor |
| 10 |
LM2416C |
Triple 50 MHz CRT Driver |
National Semiconductor |
| 11 |
NGA-186 |
DC-6000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. 12.0dB gain, 14.7 dBmP1dB at 1950MHz. |
Stanford Microdevices |
| 12 |
NGA-286 |
DC-6000 MHz, cascadable 50 ohm (1.3:1 VSWR) GaAs HBT MMIC amplifier. High gain: 14.8 at 1950MHz. |
Stanford Microdevices |
| 13 |
NGA-386 |
DC-5000 MHz, cascadable 50 ohm (1.2:1 VSWR) GaAs HBT MMIC amplifier. High gain: 18.9 at 1950MHz. |
Stanford Microdevices |
| 14 |
NGA-489 |
0.5-10 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 14.5 dB at 1950MHz. |
Stanford Microdevices |
| 15 |
NGA-589 |
DC-5.5 GHz, cascadable 50 ohm InGa/GaAs HBT MMIC amplifier. High gain: 19.2 dB at 1950MHz. |
Stanford Microdevices |
| 16 |
NGA-686 |
DC-6000 MHz, cascadable 50 ohm GaAs HBT MMIC amplifier. 11.4dB gain, 19.2 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 17 |
NGA-689 |
DC-5000 MHz, cascadable 50 ohm(1.4:1 VSRM) GaAs HBT MMIC amplifier. 11.7dB gain, 18.9 dBm P1dB at 1950MHz. |
Stanford Microdevices |
| 18 |
Q62702-G0041 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz) |
Siemens |
| 19 |
Q62702-G0042 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 20 |
Q62702-G0043 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) |
Siemens |
| 21 |
Q62702-G0057 |
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ��-gain block Unconditionally stable) |
Siemens |
| 22 |
Q62702-G0067 |
Si-MMIC-Amplifier in SIEGET 25-Technologie (Cascadable 50 W-gain block Unconditionally stable) |
Siemens |
| 23 |
SNA-100 |
DC-10 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 24 |
SNA-176 |
DC-10 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 25 |
SNA-200 |
DC-6.5 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 26 |
SNA-276 |
DC-6.5 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 27 |
SNA-300 |
DC-3 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 28 |
SNA-376 |
DC-3 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 29 |
SNA-400 |
DC-8 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
| 30 |
SNA-476 |
DC-8 GHz, cascadable GaAs MMIC amplifier. Cascadable 50 ohm gain block. |
Stanford Microdevices |
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