No. |
Part Name |
Description |
Manufacturer |
1 |
100331 |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
2 |
100331 |
Low Power Triple D Flip-Flop |
National Semiconductor |
3 |
100331D |
Low Power Triple D Flip-Flop |
National Semiconductor |
4 |
100331DC |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
5 |
100331DCQR |
Low power triple D flip-flop. Commercial grade device with burn-in. |
National Semiconductor |
6 |
100331DMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
7 |
100331F |
Low Power Triple D Flip-Flop |
National Semiconductor |
8 |
100331FCQR |
Low power triple D flip-flop. Commercial grade device with burn-in. |
National Semiconductor |
9 |
100331FMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
10 |
100331MW8 |
Low Power Triple D Flip-Flop |
National Semiconductor |
11 |
100331PC |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
12 |
100331QC |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
13 |
100331QCQR |
Low power triple D flip-flop. Commercial grade device with burn-in. |
National Semiconductor |
14 |
100331QCX |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
15 |
100331QI |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
16 |
100331QIX |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
17 |
100331QMQB |
Low power triple D flip-flop. Military grade device with environmental and burn-in processing. |
National Semiconductor |
18 |
100331SC |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
19 |
100331SCX |
Low Power Triple D-Type Flip-Flop |
Fairchild Semiconductor |
20 |
108T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
21 |
109T2 |
NPN power transistor Triple Diffused - Fast switching |
SESCOSEM |
22 |
10SI05 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 50V |
IPRS Baneasa |
23 |
10SI05R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 50V |
IPRS Baneasa |
24 |
10SI1 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 100V |
IPRS Baneasa |
25 |
10SI10 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1000V |
IPRS Baneasa |
26 |
10SI10R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1000V |
IPRS Baneasa |
27 |
10SI12 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 1200V |
IPRS Baneasa |
28 |
10SI12R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 1200V |
IPRS Baneasa |
29 |
10SI1R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 100V |
IPRS Baneasa |
30 |
10SI2 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 200V |
IPRS Baneasa |
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