No. |
Part Name |
Description |
Manufacturer |
1 |
10703A |
10703A Retroreflector |
Agilent (Hewlett-Packard) |
2 |
10704A |
10704A Retroreflector |
Agilent (Hewlett-Packard) |
3 |
10724A |
10724A Plane Mirror Reflector |
Agilent (Hewlett-Packard) |
4 |
10767A |
10767A Retroreflector |
Agilent (Hewlett-Packard) |
5 |
10767B |
10767B Lightweight Retroreflector |
Agilent (Hewlett-Packard) |
6 |
10771A |
10771A Angular Reflector |
Agilent (Hewlett-Packard) |
7 |
1088-3 |
MR3 Reflector Lamp Assemblies |
Gilway Technical Lamp |
8 |
1150-3 |
MR3 Reflector Lamp Assemblies |
Gilway Technical Lamp |
9 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
10 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
11 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
12 |
2N1906 |
Germanium Diffused Collector PNP, typical application High Power Amplifier |
SGS-ATES |
13 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
14 |
2N2297 |
NPN Transistor Medium Power, high collector current |
Amelco Semiconductor |
15 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
16 |
2N2481 |
NPN silicon annular transistor, collector connected to case |
Motorola |
17 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
18 |
2N3744 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
19 |
2N3745 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
20 |
2N3746 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
21 |
2N3747 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
22 |
2N3748 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
23 |
2N3749 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
24 |
2N3750 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
25 |
2N3751 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
26 |
2N3752 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
27 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
28 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
29 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
30 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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