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Datasheets for LF RE

Datasheets found :: 141
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
2 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
3 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
4 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
5 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
6 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
7 A42L8316S-40 40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge AMIC Technology
8 A42L8316V-34 40ns; self refresh 256K x 16 CMOS dynamic RAM with EDO page moge AMIC Technology
9 CMA0204 High Pulse Load MELF Resistor Vishay
10 H6061 3 V Self Recovering Watchdog EM Microelectronic-Marin SA
11 H6061258P 3 V Self Recovering Watchdog EM Microelectronic-Marin SA
12 H6061258S 3 V Self Recovering Watchdog EM Microelectronic-Marin SA
13 H606125X8P 3 V Self Recovering Watchdog EM Microelectronic-Marin SA
14 H606125X8S 3 V Self Recovering Watchdog EM Microelectronic-Marin SA
15 HY51VS18163HGJ-5 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns Hynix Semiconductor
16 HY51VS18163HGJ-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns Hynix Semiconductor
17 HY51VS18163HGJ-7 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns Hynix Semiconductor
18 HY51VS18163HGLJ-5 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power Hynix Semiconductor
19 HY51VS18163HGLJ-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Hynix Semiconductor
20 HY51VS18163HGLJ-7 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Hynix Semiconductor
21 HY51VS18163HGLT-5 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power Hynix Semiconductor
22 HY51VS18163HGLT-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Hynix Semiconductor
23 HY51VS18163HGLT-7 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Hynix Semiconductor
24 HY51VS18163HGT-5 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns Hynix Semiconductor
25 HY51VS18163HGT-6 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns Hynix Semiconductor
26 HY51VS18163HGT-7 Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns Hynix Semiconductor
27 HYB314171BJ-50 -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Siemens
28 HYB314171BJ-50 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Siemens
29 HYB314171BJ-50 -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Siemens
30 HYB314171BJ-50 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh Siemens


Datasheets found :: 141
Page: | 1 | 2 | 3 | 4 | 5 |



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