| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2404BG |
Hybrid Circuit Operational Amplifier, low power, high voltage |
Amelco Semiconductor |
| 2 |
2405BG |
Hybrid Circuit Operational Amplifier, low power, high voltage |
Amelco Semiconductor |
| 3 |
2N1141 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 4 |
2N1142 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 5 |
2N1143 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 6 |
2N1195 |
PNP germanium mesa transistor for amplifier, driver, oscillator and doubler applications |
Motorola |
| 7 |
2N2483 |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
| 8 |
2N2484 |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
| 9 |
2N2484A |
NPN Transistor General Purpose, low noise, low level amplifier, high current gain |
Amelco Semiconductor |
| 10 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
| 11 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 12 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 13 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 14 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 15 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 16 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 17 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 18 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 19 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 20 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 21 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 22 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 23 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 24 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 25 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 26 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 27 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 28 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 29 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 30 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
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