| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 2 |
2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications |
SANYO |
| 3 |
2SB1118 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
| 4 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 5 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 6 |
2SC1009R |
NPN silicon epitaxial transistor, FM/AM RF amplifier, mixer, oscillator, converter |
NEC |
| 7 |
2SC151H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 8 |
2SC152H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier, Medium Speed Switching |
Hitachi Semiconductor |
| 9 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 10 |
2SC1675 |
FM/AM RF amplifier, mixer, converter, oscillator,IF. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 50mA. |
USHA India LTD |
| 11 |
2SC3077 |
Si NPN planar. UHF amplifier, mixer. |
Panasonic |
| 12 |
2SC4179 |
FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 13 |
2SC4694 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications |
SANYO |
| 14 |
2SC4695 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Muting Applications |
SANYO |
| 15 |
2SC708AH |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 16 |
2SC708H |
Silicon NPN Triple Diffused Transistor, intended for use in Medium Power Amplifier, Medium Power Switching |
Hitachi Semiconductor |
| 17 |
2SC717 |
Silicon NPN Epitaxial Planar Transistor, intended for use in VHF RF Amplifier, Mixer, Oscillator |
Hitachi Semiconductor |
| 18 |
2SC717 |
VHF RF AMPLIFIER, MIXER, OSCILLATOR |
Unknow |
| 19 |
2SD1618 |
Low-Voltage High-Current Amplifier, Muting Applications |
SANYO |
| 20 |
3SK35 |
Silicon N-Channel Dual gate MOS field effect transistor, TV, VHF and FM Tuner Amplifier, Mix Applications |
TOSHIBA |
| 21 |
AN614 |
Video amplifier, modulator/demodulator IC |
Panasonic |
| 22 |
BF161 |
Epitaxial planar NPN transistor, intended for UHF amplifier, mixer and oscillator applications |
SGS-ATES |
| 23 |
BF554 |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
Siemens |
| 24 |
EB27A |
Application Note - Get 300 Watts PEP linear across 2 to 30 MHz from this PUSH-PULL amplifier, MRF422 |
Motorola |
| 25 |
GF105 |
Germanium PNP high-frequency transistor for amplifier, mixer and oscillator stages |
RFT |
| 26 |
HA-2520/883 |
Microcircuit, Linear, High Speed, Operational Amplifier, Monolithic Silicon |
Intersil |
| 27 |
ICH8515MKA |
Power Operational Amplifier, Military |
Intersil |
| 28 |
JAN2N2708 |
NPN silicon annular transistor designed for low power IF and RF use in VHF/UHF amplifier, mixer and oscillator applications |
Motorola |
| 29 |
JAN2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 30 |
LH2108AD/883B |
Precision Operational Amplifier, Mil-Std-883, level B processing |
Raytheon |
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