| No. |
Part Name |
Description |
Manufacturer |
| 1 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 2 |
HM51S4260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 3 |
KM681002CLJ-10 |
128K x 8 high speed static RAM, 5V operating, 10ns, low power |
Samsung Electronic |
| 4 |
KM681002CLJ-12 |
128K x 8 high speed static RAM, 5V operating, 12ns, low power |
Samsung Electronic |
| 5 |
KM681002CLJ-15 |
128K x 8 high speed static RAM, 5V operating, 15ns, low power |
Samsung Electronic |
| 6 |
KM68257CLJ-12 |
32Kx8 bit high speed static RAM (5V operating), 12ns |
Samsung Electronic |
| 7 |
KM68257CLJ-15 |
32Kx8 bit high speed static RAM (5V operating), 15ns |
Samsung Electronic |
| 8 |
PO40G-LJ-119 |
MIL Standard SMP Compatible Push-on Lock Coaxial Connectors |
Hirose Electric |
| 9 |
PO51M-LJ-1.5 |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 10 |
PO51M-LJ-1.5W |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| 11 |
PO51M-LJ-178-1 |
2mm Hard Metric Coaxial Connector |
Hirose Electric |
| | | |
