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Datasheets found :: 3
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No. | Part Name | Description | Manufacturer |
---|---|---|---|
1 | HM514260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory | Hitachi Semiconductor |
2 | HM51S4260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory | Hitachi Semiconductor |
3 | KM681002CLJ-10 | 128K x 8 high speed static RAM, 5V operating, 10ns, low power | Samsung Electronic |
Datasheets found :: 3
Page:
| 1 |
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